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Proceedings Paper

Resonant-Tunneling Transistors Using InGaAs-Based Materials
Author(s): Naoki Yokoyama; Hiroaki Ohnishi; Toshiroh Futatsugi; Shunichi Muto; Toshihiko Mori; Kenichi Imamura; Akihiro Shibatomi
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Paper Abstract

This paper reviews our current research activities into resonant-tunneling hot electron transistors (RHETs) and resonant-tunneling bipolar transistors (RBTs) and describes our recent advances in these device technologies using InGaAs-based materials. The InGaAs-based RHET's common-emitter current gain at 77K is typically 17 (with a maximum of 25), which is about four times greater than that of a GaAs-based RHET. The collector current peak-to-valley ratio reaches 19.3 (with a maximum of 21.7). This is eight times that of the GaAs-based RHET. The InGaAs-based RBTs have been operated at room temperature with a current gain of 26 and a collector current peak-to-valley ratio of 2.3. The scattering parameters of the InGaAs-based RBT have been measured in a frequency range from 0.2 to 20.2 GHz. The cutoff frequency fT is measured as 12.4 GHz, indicating an emitter-to-collector delay of 12.8 ps. The delay due to the resonant-tunneling barrier used for this RBT is estimated to be 1.4 ps using an equivalent RBT circuit analysis.

Paper Details

Date Published: 18 August 1988
PDF: 8 pages
Proc. SPIE 0943, Quantum Well and Superlattice Physics II, (18 August 1988); doi: 10.1117/12.947278
Show Author Affiliations
Naoki Yokoyama, Fujitsu Limited (Japan)
Hiroaki Ohnishi, Fujitsu Limited (Japan)
Toshiroh Futatsugi, Fujitsu Limited (Japan)
Shunichi Muto, Fujitsu Limited (Japan)
Toshihiko Mori, Fujitsu Limited (Japan)
Kenichi Imamura, Fujitsu Limited (Japan)
Akihiro Shibatomi, Fujitsu Limited (Japan)

Published in SPIE Proceedings Vol. 0943:
Quantum Well and Superlattice Physics II
Federico Capasso; Gottfried H. Doehler; Joel N. Schulman, Editor(s)

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