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Proceedings Paper

High-Speed Resonant-Tunneling Diodes
Author(s): E. R. Brown; T. C. L. G. Sollner; W. D. Goodhue; C. L. Chen
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Paper Abstract

This paper reviews some of the progress that has occurred recently in both the theory and performance of resonant-tunneling diodes. It begins by describing the present physical understanding of the resonant-tunneling process. Recent experimental advances in resonant-tunneling oscillators are then discussed, including the demonstration of oscillations at frequencies up to 200 GHz. To better understand these results, a detailed analysis is made of the mechanisms that limit the speed of this device. This analysis includes a calculation of the quasibound state lifetime, a determination of the device capacitance from the electrostatic band-bending, and an estimate of the negative differential conductance using two different methods. On this theoretical basis, a device structure is analyzed that could oscillate up to 600 GHz.

Paper Details

Date Published: 18 August 1988
PDF: 12 pages
Proc. SPIE 0943, Quantum Well and Superlattice Physics II, (18 August 1988); doi: 10.1117/12.947276
Show Author Affiliations
E. R. Brown, Massachusetts Institiute of Technology (United States)
T. C. L. G. Sollner, Massachusetts Institiute of Technology (United States)
W. D. Goodhue, Massachusetts Institiute of Technology (United States)
C. L. Chen, Massachusetts Institiute of Technology (United States)


Published in SPIE Proceedings Vol. 0943:
Quantum Well and Superlattice Physics II
Federico Capasso; Gottfried H. Doehler; Joel N. Schulman, Editor(s)

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