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Proceedings Paper

Electron-Hole-Phonon Coupling In Semiconductor Quantum Wells
Author(s): W. Cai; T. F. Zheng; M. C. Marchetti; M. Lax
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Paper Abstract

We study the transport of the photoexcited quasi-2D electron-hole (e-h) plasma in a p-doped semiconductor quantum well, where electrons are a minority. Using the drifted temperature model for both electrons and holes and introducing a coordinate transformation to the center-of-mass system, separately, for electrons and holes, we obtain a set of coupled equations for the drift velocities and the temperatures of electrons and holes. We show that negative absolute mobility for minority electrons occurs at low temperature and under a weak electric field due to the electron-hole drag. In a strong electric field and at room bath temperature, our results show that the electrons are heated much more than the holes. The electron mobility is smaller in the presence of the hole plasma than in the absence of holes. These results are in agreement with experiments.

Paper Details

Date Published: 22 August 1988
PDF: 8 pages
Proc. SPIE 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, (22 August 1988); doi: 10.1117/12.947225
Show Author Affiliations
W. Cai, City College of City University of New York (United States)
T. F. Zheng, City College of City University of New York (United States)
M. C. Marchetti, Syracuse University (United States)
M. Lax, City College of City University of New York and AT&T Bell Laboratories (United States)


Published in SPIE Proceedings Vol. 0942:
Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II
Robert R. Alfano, Editor(s)

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