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Proceedings Paper

Cooling Of Hot Electron-Hole-Plasmas In GaAs Quantum Wells
Author(s): K. Leo; W. W. Ruhle
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Paper Abstract

The cooling of hot carriers is systematically investigated in undoped, n-doped, and p-doped GaAs/A1GaAs quantum wells of different well widths by time-resolved luminescence spectroscopy. The energy-loss of electrons by scattering with optical phonons is highly reduced at all excitation densities compared to a simple theory of the interactions; for holes, the energy-loss comes close to theory at low excitation density. The energy-loss rates of the carriers are, however, within error independent of dimensionality and well width. The reduction of the energy-loss-rate by optical phonon scattering cannot be explained by screening or degeneracy. It is qualitatively consistent with a hot phonon effect. The energy-loss-rate due to deformation potential scattering with acoustical phonons increases with decreasing well width.

Paper Details

Date Published: 22 August 1988
PDF: 10 pages
Proc. SPIE 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, (22 August 1988); doi: 10.1117/12.947220
Show Author Affiliations
K. Leo, Max-Planck-Institut fur Festkorperforschung (Germany)
W. W. Ruhle, Max-Planck-Institut fur Festkorperforschung (Germany)

Published in SPIE Proceedings Vol. 0942:
Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II
Robert R. Alfano, Editor(s)

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