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Proceedings Paper

Spin Orientation And Relaxation Of Carriers In GaAs/A1GaAs Quantum Wells
Author(s): Hsieh-Shin Chao; K. S. Wong; R. R. Alfano; H. Unlu; H. Morkoc
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Paper Abstract

Angular and linear momentum of carriers in semiconductors can be oriented 1,2 using polarized light . Over past twenty years, spin alignment and relaxation in bulk samples have been studied by applying various techniques3-7. The degree of carrier spin polarization depends on the optical matrix elements, selection rules, the symmetry of 8-12 bands, crystal structure, excitations, relaxation mechanisms and dimensionality. The search for highly spin polarized source for high energy and atomic physics is still in progress. Optical pumping offers the most direct, convenient, and simple method. One of the ways to study spin alignment is to measure the degree of circular polarized photoluminescence. A great deal of work has been done on bulk semiconductors in particular GaAs. Since the energy states and phonon modes in quantum well are altered, the degree of spin polarization and spin relaxation processes in quantum wells should be different and may offer a new highly polarized spin source. At k=0, the valence band degeneracy in a quantum well is lifted and may give rise to higher spin polarization. In this paper, we report for the first time on the degree of spin alignment and spin relaxation of carriers at different energies in quantum wells using time resolved picosecond photoluminescence spectroscopy.

Paper Details

Date Published: 22 August 1988
PDF: 8 pages
Proc. SPIE 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, (22 August 1988); doi: 10.1117/12.947218
Show Author Affiliations
Hsieh-Shin Chao, City College of New York (United States)
K. S. Wong, City College of New York (United States)
R. R. Alfano, City College of New York (United States)
H. Unlu, University of Illinois (United States)
H. Morkoc, University of Illinois (United States)

Published in SPIE Proceedings Vol. 0942:
Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II
Robert R. Alfano, Editor(s)

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