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Proceedings Paper

Nonequilibrium Phonon Dynamics In A Semiconductor Quantum Well
Author(s): M. Lax; W. Cai; M. C. Marchetti
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Paper Abstract

The description of the dynamics of nonequilibrium phonons in heterolayers, where the carriers are quasi-two-dimensional (2D), while the equilibrium lattice excitations are, to a first approximation, those of the bulk, require a new theoretical approach. We have derived a kinetic equation for the phonon one-body density matrix, and then transform it to a tractable set of equations by introducing a "phonon wavepacket" representation. Our result removes the spurious dependence on the size of the sample that results when the nonequilibrium phonons are represented in terms of decoupled 3D plane waves. Using this approach we have calculated the relaxation and the transport of carriers in both steady state and time dependent processes. The results show the importanc6 of considering the hot phonon effect, which explains the deviation between the recent experiments and previous theoretical calculations.

Paper Details

Date Published: 22 August 1988
PDF: 7 pages
Proc. SPIE 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, (22 August 1988); doi: 10.1117/12.947217
Show Author Affiliations
M. Lax, City College of City University of New York and AT&T Bell Laboratories (United States)
W. Cai, City College of City University of New York (United States)
M. C. Marchetti, Syracuse University (United States)


Published in SPIE Proceedings Vol. 0942:
Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II
Robert R. Alfano, Editor(s)

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