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Proceedings Paper

Effects Of Picosecond-Laser-Driven Shock Waves On The Photoluminescence From Semiconductors
Author(s): X. Z. Lu; R. Garuthara; S. Lee; R. R. Alfano
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Paper Abstract

A pump-and-probe technique was used to investigate the shock wave effects on the photoluminescence spectra from GaSe and GaAs semiconductors. Shock waves were generated by focusing intense picosecond laser pulses of the pump beam at 1.064 μm onto an aluminum foil attached to the sample. Under laser driven shock loading, a 24 nm spectral red-shift of the spontaneous emission peak which corresponds to 14 kbar shock pressure was detected in GaSe. Significant line broadening is attributed to the shock-wave-induced collision mechanism. The observed larger red-shift of 36 nm and the intensity decrease of the stimulated emission were explained by the shock-wave-induced band gap shrinkage through the gain reduction mechanism based on exciton-exciton scattering process. In GaAs, the photoluminescence peak was observed to blue-shift and split into two components, corresponding to the transitions from the r6 conduction band to the valence heavy-hole- and light-hole-subbands due to symmetry breaking by the uniaxial shock compression along the [001] direction.

Paper Details

Date Published: 22 August 1988
PDF: 9 pages
Proc. SPIE 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, (22 August 1988); doi: 10.1117/12.947210
Show Author Affiliations
X. Z. Lu, The City College of New York (United States)
R. Garuthara, The City College of New York (United States)
S. Lee, The City College of New York (United States)
R. R. Alfano, The City College of New York (United States)


Published in SPIE Proceedings Vol. 0942:
Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II
Robert R. Alfano, Editor(s)

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