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Proceedings Paper

Time-Resolved Studies Of Phase Transitions At Semiconductor Surfaces
Author(s): H. W.K. Tom; G. D. Aumiller; C. H. Brito-Cruz
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Paper Abstract

ÅOptical second-harmonic studies show that the electronic structure in the top 75 - 130 A of a crystalline Si surface loses cubic order only 150 fsec after the Si is excited by an intense 100 fsec optical pulse. This suggests that atomic disorder can be induced directly by electronic excitation, before the material becomes vibrationally excited. In contrast, the electronic properties of the equilibrium molten phase are not obtained for several hundreds of fsec.

Paper Details

Date Published: 22 August 1988
PDF: 5 pages
Proc. SPIE 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, (22 August 1988); doi: 10.1117/12.947209
Show Author Affiliations
H. W.K. Tom, AT&T Bell Laboratories (United States)
G. D. Aumiller, AT&T Bell Laboratories (United States)
C. H. Brito-Cruz, AT&T Bell Laboratories (United States)


Published in SPIE Proceedings Vol. 0942:
Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II
Robert R. Alfano, Editor(s)

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