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Proceedings Paper

Picosecond Dynamics Of The GaAs (110) Surface Studied With Laser Photoemission
Author(s): R. Haight; J. A. Silberman; M. I. Lilie
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Paper Abstract

A novel laser system and detection scheme is described which has been developed to investigate the transient dynamics of photoexcited electrons at material surfaces and interfaces with photoemission. The excited carrier population on the surface of GaAs (110) and the related Cr/GaAs (110) surface has been studied with 1-2 picosecond time resolution. Studies reveal a rapid rise and fall of the photexcited carrier population at the clean semiconductor surface within 15 picoseconds of excitation. For times greater than 15 picoseconds the carrier density decays slowly. Studies of the photoexcited surface after deposition of small numbers of Cr atoms reveal a remarkable decrease in the carrier density observed at the surface for a coverage as low as .006 monolayer.

Paper Details

Date Published: 22 August 1988
PDF: 6 pages
Proc. SPIE 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, (22 August 1988); doi: 10.1117/12.947208
Show Author Affiliations
R. Haight, IBM T.J. Watson Research Center (United States)
J. A. Silberman, IBM T.J. Watson Research Center (United States)
M. I. Lilie, IBM T.J. Watson Research Center (United States)


Published in SPIE Proceedings Vol. 0942:
Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II
Robert R. Alfano, Editor(s)

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