Share Email Print
cover

Proceedings Paper

Relaxation And Linebroadening Of Optical Phonons In Crystaline Germanium
Author(s): A. Z. Genack; L. Ye; C. B. Roxlo
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

The relaxation rate, 1/τ , of a nonequilibrium population of zone center TO phonons in Ge is obtained by measuring the decay of the intensity of spontaneous anti-Stokes Raman scattering from two picosecond laser pulses as the pulse separation is increased., The relaxation rate 1/τ is the difference between the rate, 1/T1, of the breakup of optical phonons into two or more phonons and the inverse processes which replenish the phonon population. The lifetime contributions to the Raman linewidth, pv is ▵νℓ=1/27πTi. A comparison of the temperature dependence of Δνℓ with Av measured by Menendez and Cardona shows that the line is homogeneously broadened and is the sum of a lifetime and pure dephasing contributions due to scattering of the phonon k vector by isotopic disorder, Δν = Δνℓ +Δvd. The ability to resolve various contributions to the Raman linewidth can clarify the nature of phonon interactions.

Paper Details

Date Published: 22 August 1988
PDF: 8 pages
Proc. SPIE 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, (22 August 1988); doi: 10.1117/12.947206
Show Author Affiliations
A. Z. Genack, Queens College of CUNY (United States)
L. Ye, Exxon Research and Engineering Company (United States)
C. B. Roxlo, Exxon Research and Engineering Company (United States)


Published in SPIE Proceedings Vol. 0942:
Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II
Robert R. Alfano, Editor(s)

© SPIE. Terms of Use
Back to Top