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Proceedings Paper

Picosecond Raman Scattering From Non-Equilibrium Collective Modes In Diamond And Zincblende Semiconductors
Author(s): Jeff F. Young; Kam Wan; David J. Lockwood; Jean-Marc Baribeau; A. Othonos; H. M. van Driel
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Paper Abstract

Picosecond Raman scattering is a useful probe of non-equilibrium photo-excited carrier and phonon dynamics in group III-V and group IV semiconductors. In group III-V materials, time-resolved Raman scattering is used to explicitly demonstrate the strong long-range coupling of non-equilibrium free carriers with longitudinal optic phonon modes. This effect is exploited to provide a probe of the non-equilibrium free carrier density. In group IV materials, the absence of long range plasma-lattice interactions enables the generation and observation of non-equilibrium optical phonon modes in the presence of photo-excited plasma densities as high as 1 x 1019 cm-3. The non-equilibrium phonons in Ge and Gel_xSix alloys exhibit significantly different properties than those observed previously by others in GaAs and Ga1_xA1xAs.

Paper Details

Date Published: 22 August 1988
PDF: 6 pages
Proc. SPIE 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, (22 August 1988); doi: 10.1117/12.947204
Show Author Affiliations
Jeff F. Young, National Research Council of Canada (Canada)
Kam Wan, National Research Council of Canada (Canada)
David J. Lockwood, National Research Council of Canada (Canada)
Jean-Marc Baribeau, National Research Council of Canada (Canada)
A. Othonos, University of Toronto (Canada)
H. M. van Driel, University of Toronto (Canada)


Published in SPIE Proceedings Vol. 0942:
Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II
Robert R. Alfano, Editor(s)

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