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Proceedings Paper

Time-Resolved Raman Studies In GaAs-Al[sub]x[/sub] Ga[sub]1_x[/sub]As Multiple Quantum Well Structures
Author(s): K. T. Tsen; Shu-Chen Y. Tsen; H. Morkoc
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Paper Abstract

Time-resolved Raman scattering has been employed to investigate phonon-phonon interactions in GaAs-AlxGal_xAs multiple quantum well structures. By separately monitoring the growth as well as decay of the non-equilibrium LO phonons created by the relaxing carriers inside each type of layers, information about the hot carrier dynamics such as the population relaxation time of the LO phonons has been obtained. Our experimental results have shown that (1) phonon zone-folding plays little role in the determination of the population relaxation time of GaAs, GaAs-like and AlAs-like LO phonons; (2) hot-phonon effect should also be important in the AlxGal_xAs layers of GaAs-AlxGai_xAs multiple quantum well structures; (3) the average population relaxation time of the LO phonons which are active in hot-phonon effect in GaAs quantum wells is determined to be 8±1ps at T=10K.

Paper Details

Date Published: 22 August 1988
PDF: 6 pages
Proc. SPIE 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, (22 August 1988); doi: 10.1117/12.947202
Show Author Affiliations
K. T. Tsen, Arizona State University (United States)
Shu-Chen Y. Tsen, Arizona State University (United States)
H. Morkoc, University of Illinois (United States)


Published in SPIE Proceedings Vol. 0942:
Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II
Robert R. Alfano, Editor(s)

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