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Proceedings Paper

Nonequilibrium Phonons And Carrier Cooling In Polar Semiconductors
Author(s): Walter Potz; M.Cristina Marchetti
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Paper Abstract

We present a theoretical study of optical phonon build-up associated with the ultrafast cooling of highly photo-excited electron-hole plasmas in polar semiconductors. Confining ourselves to the study of high carrier concentrations and subpicosecond laser excitation of bulk GaAs and GaAlAs-GaAs single quantum well structures, we find that rather long optical phonon lifetimes are primarily responsible for the experimental observation of reduced carrier cooling rates. The importance of the carrier-carrier interaction, screening, carrier confinement, and slab modes is discussed.

Paper Details

Date Published: 22 August 1988
PDF: 7 pages
Proc. SPIE 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, (22 August 1988); doi: 10.1117/12.947200
Show Author Affiliations
Walter Potz, University of Illinois at Chicago (United States)
M.Cristina Marchetti, Syracuse University (United States)

Published in SPIE Proceedings Vol. 0942:
Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II
Robert R. Alfano, Editor(s)

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