Share Email Print

Proceedings Paper

Hot Carrier Dynamics In Amorphous Semiconductors
Author(s): P. M. Fauchet; K. Gzara; I. H. Campbell; D. Hulin; C. Tanguy; A. Mourchid; A. Antonetti
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We report novel experimental and theoretical results of our investigation of hot carrier dynamics in disordered materials. Femtosecond optical spectroscopy and cw photoluminescence appear to be very promising techniques for the study of carrier relaxation in the extended states and carrier trapping in the weakly localized states. In this paper, we focus on undoped a-Si:H.

Paper Details

Date Published: 22 August 1988
PDF: 8 pages
Proc. SPIE 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, (22 August 1988); doi: 10.1117/12.947199
Show Author Affiliations
P. M. Fauchet, Princeton University (United States)
K. Gzara, Princeton University (United States)
I. H. Campbell, Princeton University (United States)
D. Hulin, ENSTA-Ecole Polytechnique (France)
C. Tanguy, ENSTA-Ecole Polytechnique (France)
A. Mourchid, ENSTA-Ecole Polytechnique (France)
A. Antonetti, ENSTA-Ecole Polytechnique (France)

Published in SPIE Proceedings Vol. 0942:
Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II
Robert R. Alfano, Editor(s)

© SPIE. Terms of Use
Back to Top