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Proceedings Paper

Femtosecond Studies Of Excited Carrier Energy Relaxation And Intervalley Scattering In GaAs and AlGaAs
Author(s): W. Z. Lin; M. J. LaGasse; R. W. Schoenlein; B. Zysset; J. G. Fujimoto
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Paper Abstract

We report the investigation of excited carrier scattering, energy relaxation, and intervalley scattering in GaAs and AlGaAs. Pump and continuum probe absorption saturation measurements provide evidence for femtosecond transient nonthermal carrier distributions and permit a measurement of carrier cooling processes. Measurements performed using a tunable femotsecond laser allow an investigation of intervalley scattering.

Paper Details

Date Published: 22 August 1988
PDF: 9 pages
Proc. SPIE 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, (22 August 1988); doi: 10.1117/12.947198
Show Author Affiliations
W. Z. Lin, Massachusetts Institute of Technology (United States)
M. J. LaGasse, Massachusetts Institute of Technology (United States)
R. W. Schoenlein, Massachusetts Institute of Technology (United States)
B. Zysset, Massachusetts Institute of Technology (United States)
J. G. Fujimoto, Massachusetts Institute of Technology (United States)


Published in SPIE Proceedings Vol. 0942:
Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II
Robert R. Alfano, Editor(s)

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