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Proceedings Paper

Relaxation Of Ultrafast Electrons In Semiconductors: Many Body Effects
Author(s): Sankar Das Sarnia; Jainendra K. Jain; Rodolfo Jalabert
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Paper Abstract

The transport of highly excited carriers is governed by their energy loss to phonons. There is a special interest in a thorough understanding of this phenomenon in semiconductors, as it can be of help in determining the characteristics of ultrasmall, high field devices. Recently developed steady-state electric-field-induced heating techniques provide a very adequate tool to study hot electrons since the electronic measurement of the power innut to the electron system, together with the optical determination of the electron temperature, gives a direct determination of the nower loss (P) of hot electrons as a function of temperature (T) for a fixed electron density (n).

Paper Details

Date Published: 22 August 1988
PDF: 3 pages
Proc. SPIE 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, (22 August 1988); doi: 10.1117/12.947192
Show Author Affiliations
Sankar Das Sarnia, University of Maryland (United States)
Jainendra K. Jain, University of Maryland (United States)
Rodolfo Jalabert, University of Maryland (United States)


Published in SPIE Proceedings Vol. 0942:
Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II
Robert R. Alfano, Editor(s)

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