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Proceedings Paper

Monte Carlo Probe Of Ultrafast Phenomena In Polar Semiconductors
Author(s): Paolo Lugli; Stephen M. Goodnick
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Paper Abstract

The paper presents a Monte Carlo study of ultrafast phenomena in polar semiconductors. The main focus is given to the analysis of cooling of carriers following subpicosecond laser excitations in GaAs and InP. Excellent agreement is found with time-resolved photoluminescence data. A strong non-equilibrium LO phonon population is found, which at high densities and low temperatures slows down the cooling of the photoexcited carriers. The role of upper valleys in the cooling process is crucial and explains the different behavior found in GaAs versus InP. A discussion of experimentally determined effective temperatures is given.

Paper Details

Date Published: 22 August 1988
PDF: 8 pages
Proc. SPIE 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, (22 August 1988); doi: 10.1117/12.947188
Show Author Affiliations
Paolo Lugli, University of Rome (Italy)
Stephen M. Goodnick, Oregon State University (United States)


Published in SPIE Proceedings Vol. 0942:
Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II
Robert R. Alfano, Editor(s)

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