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Proceedings Paper

High Detectivity D* = 1.0 X 10 10 cm/Hz/W GaAs/AlGaAs Multiquantum Well X = 8.3 µm Infrared Detector
Author(s): B F Levine; C G Bethea; G Hasnain; J Walker; R J Malik
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Paper Abstract

We report the first high detectivity, (D* = 1.0 X 1010 cm √Hz/W), high responsivity (Rv = 30,000 V/W), GaAs/A1),Gai_xAs multiquantum well detector, sensitive in the long wavelength infrared band (LWIR) at λ = 8.3 μm (operating at a temperature of T = 77K). Due to the mature GaAs growth and processing technologies as well as the potential for monolithic integration with high speed GaAs FETs, large focal plane arrays of these detectors should be possible.

Paper Details

Date Published: 15 August 1988
PDF: 11 pages
Proc. SPIE 0930, Infrared Detectors and Arrays, (15 August 1988); doi: 10.1117/12.946632
Show Author Affiliations
B F Levine, AT&T Bell Laboratories (United States)
C G Bethea, AT&T Bell Laboratories (United States)
G Hasnain, AT&T Bell Laboratories (United States)
J Walker, AT&T Bell Laboratories (United States)
R J Malik, AT&T Bell Laboratories (United States)


Published in SPIE Proceedings Vol. 0930:
Infrared Detectors and Arrays
Eustace L. Dereniak, Editor(s)

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