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Proceedings Paper

InAsSb Strained-Layer Superlattices: A New Class Of Far Infrared Materials
Author(s): S R Kurtz; L R Dawson; R M Biefeld; G C Osbourn
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Paper Abstract

The physical properties of InAsSb strained-layer superlattices are reviewed. After a brief description of the band structure and superlattice growth and characterization, we present infrared absorption results and demonstrate the first device made from these materials, a p-n junction photodiode. From these studies, we find that these new materials can be designed to absorb out into the far infrared, well beyond the bandgap of any bulk III-V material. The prototype, non-optimized photodiode displayed a detectivity at 7 pm that is within one order of magnitude of the detectivity of the best HgCdTe detectors at that wavelength.

Paper Details

Date Published: 15 August 1988
PDF: 13 pages
Proc. SPIE 0930, Infrared Detectors and Arrays, (15 August 1988); doi: 10.1117/12.946631
Show Author Affiliations
S R Kurtz, Sandia National Laboratories (United States)
L R Dawson, Sandia National Laboratories (United States)
R M Biefeld, Sandia National Laboratories (United States)
G C Osbourn, Sandia National Laboratories (United States)

Published in SPIE Proceedings Vol. 0930:
Infrared Detectors and Arrays
Eustace L. Dereniak, Editor(s)

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