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Proceedings Paper

High performance identical layer InGaAlAs-MQW 1300nm electroabsorption-modulated DFB-lasers for 4x25Gbit/s
Author(s): Holger Klein; Carsten Bornholdt; Georges Przyrembel; Ariane Sigmund; Wolf-Dietrich Molzow; Martin Moehrle
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Paper Abstract

We have developed electroabsorption modulated ridge waveguide-based DFB Lasers for 4x25Gbit/s that comply with the IEEE 100GBASE-ER4 Standard for 100Gbit-Ethernet. An identical InGaAlAs MQW layer stack is used in the DFB and the EAM section. Devices from a single wafer show excellent 25Gbit/s modulation performance at all four wavelengths with dynamic extinction ratios exceeding 9dB. All devices have facet output powers over +2.5dBm and are operated semi-cooled at 45°C.

Paper Details

Date Published: 10 May 2012
PDF: 5 pages
Proc. SPIE 8432, Semiconductor Lasers and Laser Dynamics V, 84321F (10 May 2012); doi: 10.1117/12.946604
Show Author Affiliations
Holger Klein, Fraunhofer Institute for Telecommunications, Heinrich-Hertz Institute (Germany)
Carsten Bornholdt, Fraunhofer Institute for Telecommunications, Heinrich-Hertz Institute (Germany)
Georges Przyrembel, Fraunhofer Institute for Telecommunications, Heinrich-Hertz Institute (Germany)
Ariane Sigmund, Fraunhofer Institute for Telecommunications, Heinrich-Hertz Institute (Germany)
Wolf-Dietrich Molzow, Fraunhofer Institute for Telecommunications, Heinrich-Hertz Institute (Germany)
Martin Moehrle, Fraunhofer Institute for Telecommunications, Heinrich-Hertz Institute (Germany)


Published in SPIE Proceedings Vol. 8432:
Semiconductor Lasers and Laser Dynamics V
Krassimir Panajotov; Marc Sciamanna; Angel Valle; Rainer Michalzik, Editor(s)

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