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Proceedings Paper

Picosecond Ingaas PIN Photodiode For 0.95um-1.65um Operation
Author(s): Kenneth K. Li; H.David Law
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Paper Abstract

A low dark current, high speed InGaAs PIN photodiode suitable for optoelectroinc integration has been fabricated by LPE method on sem-insulating InP substrate. The photodiode has a low dark current density of 2.5x10-6A/cm2 at -10V. At the operating voltage of -5V, external quantum efficiency of >90% at 1.3um and >83% at 1.55um, a rise time of <35ps and a FWHM of <45 ps have been measured. The approach and limitations to the design of a higher speed PIN photodiode will be discussed. The importance of packaging is emphasized, and pulse distortion due to dispersion in miscrostrip line will be discussed.

Paper Details

Date Published: 2 April 1985
PDF: 6 pages
Proc. SPIE 0533, Ultrashort Pulse Spectroscopy and Applications, (2 April 1985); doi: 10.1117/12.946550
Show Author Affiliations
Kenneth K. Li, PlessCor Optronics, Inc. (United States)
H.David Law, PlessCor Optronics, Inc. (United States)


Published in SPIE Proceedings Vol. 0533:
Ultrashort Pulse Spectroscopy and Applications
M. J. Soileau, Editor(s)

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