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Proceedings Paper

The Microstructure Of High Dose Oxygen Implanted Si And Its Dependence On Implantation Conditions
Author(s): O. W. Holland; D. Fathy; T. P. Sjoreen; J. Narayan; K. More
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Paper Abstract

The formation of a buried dielectric in single crystals of silicon by high dose implantation of oxygen ions is investigated. The dependence of the microstructure on implantation conditions is determined. It will be shown that the microstructure can be tailored by changing the implant conditions to optimize its suitability for the silicon-on-insulator technology. Mechanisms responsible for the formation of the microstructure and the influence of implantation conditions will be discussed.

Paper Details

Date Published: 9 April 1985
PDF: 7 pages
Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); doi: 10.1117/12.946494
Show Author Affiliations
O. W. Holland, Oak Ridge National Laboratory (United States)
D. Fathy, Oak Ridge National Laboratory (United States)
T. P. Sjoreen, Oak Ridge National Laboratory (United States)
J. Narayan, North Carolina State University (United States)
K. More, North Carolina State University (United States)

Published in SPIE Proceedings Vol. 0530:
Advanced Applications of Ion Implantation
Michael I. Current; Devindra K. Sadana, Editor(s)

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