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Proceedings Paper

An Overview Of SOI By Implantation Of Oxygen: Materials, Devices And Circuits
Author(s): M. E. Burnham; S. R. Wilson
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Paper Abstract

Silicon on Insulators (SOI) formed by ion implantation of oxygen has been examined by several researchers including the present authors. This paper gives a brief review of this subject. The advantages of SOI versus Silicon on Sapphire (SOS) and bulk Si are discussed. The materials properties and the effects of ion implantation and anneal conditions are reviewed. Device modeling as it applies to SOI has been presented. Characteristics of devices built in SOI formed by ion implantation of oxygen are examined. Finally some circuit results are discussed.

Paper Details

Date Published: 9 April 1985
PDF: 11 pages
Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); doi: 10.1117/12.946492
Show Author Affiliations
M. E. Burnham, Motorola, Inc. (United States)
S. R. Wilson, Motorola, Inc. (United States)


Published in SPIE Proceedings Vol. 0530:
Advanced Applications of Ion Implantation
Michael I. Current; Devindra K. Sadana, Editor(s)

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