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Proceedings Paper

Formation Of Silicon On Insulator Structures By Ion Implantation
Author(s): P.L.F . Hemment
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Paper Abstract

The synthesis of buried dielectric layers by the implantation of reactive ions (0+, N+) to form silicon on insulator substrates suitable for very large scale integration (VLSI) circuits is described. Silicon (100) wafers have been implanted with ions of energy 100-300 key and doses in the range 0.25 x 1018 to 2.6 x 1018 cm2. These structures have been annealed at temperatures of up to 1200oC. The composition, microstructure and electrical properties are reported and a comparison is made between substrates formed by O+ and N+ implantations.

Paper Details

Date Published: 9 April 1985
PDF: 10 pages
Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); doi: 10.1117/12.946491
Show Author Affiliations
P.L.F . Hemment, University of Surrey (England)


Published in SPIE Proceedings Vol. 0530:
Advanced Applications of Ion Implantation
Michael I. Current; Devindra K. Sadana, Editor(s)

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