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Proceedings Paper

Thermal Annealing Behavior Of Hydrogen-Free Amorphous Silicon And Germanium
Author(s): Graham K. Hubler; Edward P. Donovan; Kou-Wei Wang; William G. Spitzer
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Paper Abstract

Recent work has demonstrated that the infrared properties (refractive index and absorption) of amorphous silicon and germanium prepared by ion implantation depend upon the low temperature thermal annealing history (1500C<T<6000C). This thermal relaxation phenomenon is the subject of this review. The data suggest the change in refractive index is caused by a structural reorganization of a continuous random network but that changes in absorption and spin density are chiefly caused by the annealing of defects within the amorphous structure.

Paper Details

Date Published: 9 April 1985
PDF: 8 pages
Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); doi: 10.1117/12.946490
Show Author Affiliations
Graham K. Hubler, Naval Research Laboratory (United States)
Edward P. Donovan, Naval Research Laboratory (United States)
Kou-Wei Wang, University of Southern California (United States)
William G. Spitzer, University of Southern California (United States)

Published in SPIE Proceedings Vol. 0530:
Advanced Applications of Ion Implantation
Michael I. Current; Devindra K. Sadana, Editor(s)

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