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Proceedings Paper

Use Of Thermal Waves To Measure Dose And Uniformity Of Si[sup]+[/sup] And Be[sup]+[/sup] Implants Into GaAs
Author(s): W.Lee Smith; R. A. Powell; John D. Woodhouse
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Paper Abstract

We report a new method for the determination of ion-implanted dose and uniformity of n-type and p-type dopants in GaAs. The technique, employing thermal waves, is noncontact and nondestructive and therefore particularly attractive for monitoring production wafers for GaAs IC production. We demonstrate dose measurements over the 1012 -1015 ions/cm2 range, contour mapping of implanted dose on a GaAs wafer, and dose measurements on discrete circuit elements of micron spatial scale on a GaAs FET.

Paper Details

Date Published: 9 April 1985
PDF: 7 pages
Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); doi: 10.1117/12.946486
Show Author Affiliations
W.Lee Smith, Therma-Wave, Inc. (United States)
R. A. Powell, Varian Research Center (United States)
John D. Woodhouse, Massachusetts Institute of Technology (United States)


Published in SPIE Proceedings Vol. 0530:
Advanced Applications of Ion Implantation
Michael I. Current; Devindra K. Sadana, Editor(s)

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