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Proceedings Paper

Resistivity Monitoring For Ion Beam Processes
Author(s): W. A. Keenan; A. K. Smith
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Paper Abstract

Four-point probe sheet resistance measurements, which are used throughout the semiconductor industry to monitor ion implant uniformity and repeatability, can also be used to determine implanter-to-implanter agreement on dose. Factors which affect accuracy, precision and probe performance of an automated sheet resistance mapping system widely used in this application are discussed. It is also shown that the spatial resolution that can be obtained using the four-point probe is better than 0.5mm, making it possible to detect short-range variability in implant doping.

Paper Details

Date Published: 9 April 1985
PDF: 8 pages
Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); doi: 10.1117/12.946484
Show Author Affiliations
W. A. Keenan, Prometrix Corporation (United States)
A. K. Smith, Prometrix Corporation (United States)

Published in SPIE Proceedings Vol. 0530:
Advanced Applications of Ion Implantation
Michael I. Current; Devindra K. Sadana, Editor(s)

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