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Proceedings Paper

Alloying Au-Ge With Gaas By Ion Beam Mixing
Author(s): R. S. Bhattacharya; A. K. Rai; H. Rashid; A. Ezis; P. P. Pronko
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Paper Abstract

Rutherford backscattering, Auger electron spectroscopy and Cross-sectional Transmission electron microscopic techniques have been utilized to study the ion beam mixing of alternating Au-Ge film structure deposited by e-gun evaporation on GaAs. Ion beam mixing was carried out with 1 MeV Au+ and with 160, 140 and 125 keV Si+ ions at various doses. Alloying was observed between Au and Ge, and between Au-Ge and GaAs induced by ion beam mixing at room temperature. The mixing efficiency of Au+ ions is about a factor of five higher than that of Si+ ions. Depending on the mass, energy and dose of ions and thickness of Au-Ge film structure, ion beam mixing produced various amounts of damage in the interface region of GaAs. Electrical characterization of a selected ion beam mixed sample revealed the rectifying nature of the contact.

Paper Details

Date Published: 9 April 1985
PDF: 7 pages
Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); doi: 10.1117/12.946479
Show Author Affiliations
R. S. Bhattacharya, Universal Energy Systems, Inc. (United States)
A. K. Rai, Universal Energy Systems, Inc. (United States)
H. Rashid, Universal Energy Systems, Inc. (United States)
A. Ezis, Universal Energy Systems, Inc. (United States)
P. P. Pronko, Universal Energy Systems, Inc. (United States)


Published in SPIE Proceedings Vol. 0530:
Advanced Applications of Ion Implantation
Michael I. Current; Devindra K. Sadana, Editor(s)

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