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Proceedings Paper

Xenon Irradiation-Induced Changes In CrSi2 Thin Films
Author(s): X-A. Zhao; T. C. Banwell; M-A. Nicolet
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Paper Abstract

Measurements of electrical resistivity are used to monitor changes in CrSi2 thin films induced by Xe irradiation over a fluence range of ≈ 1010 - 1014 cm-2. Behavior associated with defect generation and recombination are evident at high fluences. A temperature dependence at low fluences is reported and tentatively identified.

Paper Details

Date Published: 9 April 1985
PDF: 7 pages
Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); doi: 10.1117/12.946477
Show Author Affiliations
X-A. Zhao, California Institute of Technology (United States)
T. C. Banwell, California Institute of Technology (United States)
M-A. Nicolet, California Institute of Technology (United States)

Published in SPIE Proceedings Vol. 0530:
Advanced Applications of Ion Implantation
Michael I. Current; Devindra K. Sadana, Editor(s)

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