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Proceedings Paper

Numerical Calculations Of Effective Barrier Heights Of Metal/Ge Contacts Formed By Ion Implantation
Author(s): E. D. Marshall; M. W. Randolph; C. S. Wu; S. S. Lau
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Paper Abstract

Schottky barrier heights may be modified by means of shallow ion implantation. In this paper, a numerical method is presented to calculate effective barrier heights for metal-semiconductor contacts with arbitrary doping profiles. Thermionic current, image force lowering and tunneling current are considered. The transmission (tunneling) coefficient is computed by numerical solution of Schrodinger's equation and wave function matching at boundaries. A metal-germanium contact test case is investigated. This scheme may be applicable to practical implant conditions where dopant redistribution is significant.

Paper Details

Date Published: 9 April 1985
PDF: 5 pages
Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); doi: 10.1117/12.946476
Show Author Affiliations
E. D. Marshall, University of California (United States)
M. W. Randolph, University of California (United States)
C. S. Wu, University of California (United States)
S. S. Lau, University of California (United States)

Published in SPIE Proceedings Vol. 0530:
Advanced Applications of Ion Implantation
Michael I. Current; Devindra K. Sadana, Editor(s)

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