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Proceedings Paper

Avoidance Of Planar Channeling Effects In Si (100)
Author(s): Norman L. Turner; Michael I. Current; T. C. Smith; Dave Crane; Robert Simonton
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Paper Abstract

The effects of axial and planar channeling in Si (100) crystals on junction depth and sheet resistance are studied for shallow junction implants by modern ion implantation systems. Evaluation techniques such as SIMS, spreading resistance and sheet resistance contour mapping are used to characterize planar channeling. Variations in crystal to ion beam alignment due to wafer to crystal orientation, wafer flat orientation, wafer tilt, wafer flex and beam scan angle variations are tested and results given. A model for channeling is shown and calculations for the critical channeling angles for axial and planar channeling for common dopants is derived. The ability to avoid planar channeling by predictions from the model are tested for B+ and As+ using common doses and energies. Other techniques for avoidance of planar channeling such as amorphization layers of SiO2 and Si are tested and results given.

Paper Details

Date Published: 9 April 1985
PDF: 15 pages
Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); doi: 10.1117/12.946468
Show Author Affiliations
Norman L. Turner, Varian/Extrion Div. (United States)
Michael I. Current, Xerox Research Center Corp. (United States)
T. C. Smith, Motorola MOS Group (United States)
Dave Crane, Sperry Corp (United States)
Robert Simonton, Varian/Extrion Div. (United States)


Published in SPIE Proceedings Vol. 0530:
Advanced Applications of Ion Implantation
Michael I. Current; Devindra K. Sadana, Editor(s)

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