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Proceedings Paper

MeV Implantation For CMOS Applications
Author(s): Michael I. Current; Russel A. Martin; Kyriakos Doganis; Richard H. Bruce
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Paper Abstract

The use of MeV ion implantation for CMOS device fabrication is illustrated with a description of an n-type, retrograde well process which is being developed for 1 micron-scale devices. Process design and integration issues are described along with selected results for B and P ion ranges, process modeling and device characteristics.

Paper Details

Date Published: 9 April 1985
PDF: 7 pages
Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); doi: 10.1117/12.946463
Show Author Affiliations
Michael I. Current, Xerox Palo Alto Research Center (United States)
Russel A. Martin, Xerox Palo Alto Research Center (United States)
Kyriakos Doganis, Xerox Palo Alto Research Center (United States)
Richard H. Bruce, Xerox Palo Alto Research Center (United States)


Published in SPIE Proceedings Vol. 0530:
Advanced Applications of Ion Implantation
Michael I. Current; Devindra K. Sadana, Editor(s)

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