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Proceedings Paper

The IONEX MeV Implanter System
Author(s): Kenneth H. Purser; Marshall Cleland; H. Naylor; Theodore H. Smick
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Paper Abstract

The emergence of gallium arsenide technology and the trend in silicon fabrication toward CMOS based systems and smaller device sizes suggest a number of important applications for implantation in the MeV range. These include: 1. The formation of deep wells with retrograde shape without the large thermal budget associated with "pre-dep and drive-in" procedures. 2. Post-fabrication customization of devices by implant through the sealing glass and other layers normally laid down as the final stages of a semiconductor process cycle. 3. Buried grid structures for device isolation against soft errors. 4. Gallium Arsenide device fabrication.

Paper Details

Date Published: 9 April 1985
PDF: 9 pages
Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); doi: 10.1117/12.946462
Show Author Affiliations
Kenneth H. Purser, General Ionex Corporation (United States)
Marshall Cleland, General Ionex Corporation (United States)
H. Naylor, General Ionex Corporation (United States)
Theodore H. Smick, General Ionex Corporation (United States)

Published in SPIE Proceedings Vol. 0530:
Advanced Applications of Ion Implantation
Michael I. Current; Devindra K. Sadana, Editor(s)

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