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Proceedings Paper

Performance Of The MV-H2O Ion Implanter
Author(s): R. D. Rathmell; G. E. Hollman; G. A. Linton
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Paper Abstract

The performance to date of the Model MV-H2O ion implantation system will be reviewed. The MV-H20 ion implanter is based on a single ended Pelletron accelerator with a 2 MV column rating. It is designed to provide 20 iA of singly charged boron, phosphorus, and arsenic over the energy range of 400 keV to 2000 keV, although it is also expected to perform well down to 200 keV. This system includes a serial cassette to cassette wafer handler capable of automatically processing up to 80 wafers/hr of 100 mm, 125 mm, and 150 mm wafers. Operational features such as implant currents, source lifetimes, wafer throughput, and time to service the source will be presented.

Paper Details

Date Published: 9 April 1985
PDF: 5 pages
Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); doi: 10.1117/12.946461
Show Author Affiliations
R. D. Rathmell, National Electrostatics Corporation (United States)
G. E. Hollman, National Electrostatics Corporation (United States)
G. A. Linton, National Electrostatics Corporation (United States)


Published in SPIE Proceedings Vol. 0530:
Advanced Applications of Ion Implantation
Michael I. Current; Devindra K. Sadana, Editor(s)

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