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Proceedings Paper

MeV Implantation In Semiconductors
Author(s): Nathan W. Cheung
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Paper Abstract

The residual damage distributions created by MeV dopant implantation in semiconductors show that in-situ annealing is important for defect formation. Device-quality silicon can be obtained at the top few microns of the silicon substrate after a post-implant annealing cycle. A family of majority-carrier and minority-carrier devices have been fabricated by incorporating a MeV implantation step with conventional integrated-circuit processing.

Paper Details

Date Published: 9 April 1985
PDF: 7 pages
Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); doi: 10.1117/12.946460
Show Author Affiliations
Nathan W. Cheung, University of California (United States)


Published in SPIE Proceedings Vol. 0530:
Advanced Applications of Ion Implantation
Michael I. Current; Devindra K. Sadana, Editor(s)

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