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Proceedings Paper

Electron Paramagnetic Resonance Characterization Of Defects In Semiconductors
Author(s): Eicke R. Weber
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Paper Abstract

Electron Paramagnetic Resonance is a valuable tool for the characterization of defects in semiconductors. After a short introduction into the method, various examples are discussed in detail. These include intrinsic and impurity-related point defects in silicon, transition metals in semiconductors, and antisite defects in III-V compounds.

Paper Details

Date Published: 28 June 1985
PDF: 8 pages
Proc. SPIE 0524, Spectroscopic Characterization Techniques for Semiconductor Technology II, (28 June 1985); doi: 10.1117/12.946333
Show Author Affiliations
Eicke R. Weber, University of California (United States)

Published in SPIE Proceedings Vol. 0524:
Spectroscopic Characterization Techniques for Semiconductor Technology II
Fred H. Pollak; Raphael Tsu, Editor(s)

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