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Proceedings Paper

Characterization Of Amorphous And Polycrystalline Si and Ge Films
Author(s): J. Gonzalez-Hernandez; S. S. Chao; D. Martin; R. Tsu
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Paper Abstract

We have used various techniques to characterize the structure, electrical and optical properties of amorphous and polycrystalline Si and Ge films. From Raman scattering measurements, the changes in structural order for various types of a-Si systems have been characterized. From the measured Raman linewidth of the transverse optical phonons for annealed Si and Ge films, the mean deviation of the tetrahedral angle has been obtained, which leads to an activation energy for the relaxation in the amorphous phase. A systematic analysis of the structure and physical properties of polycrystalline films prepared by molecular beam deposition(MBD) under ultra-high-vacuum, has been carried out. The crystal-lization temperature, texture, and grain-size were examined as a function of deposition conditions including the effects of residual gas species. A definite correlation has been established between the electrical and optical properties and the measured structural parameters.

Paper Details

Date Published: 28 June 1985
PDF: 11 pages
Proc. SPIE 0524, Spectroscopic Characterization Techniques for Semiconductor Technology II, (28 June 1985); doi: 10.1117/12.946329
Show Author Affiliations
J. Gonzalez-Hernandez, Energy Conversion Devices, Inc. (United States)
S. S. Chao, Energy Conversion Devices, Inc. (United States)
D. Martin, Energy Conversion Devices, Inc. (United States)
R. Tsu, Energy Conversion Devices, Inc. (United States)


Published in SPIE Proceedings Vol. 0524:
Spectroscopic Characterization Techniques for Semiconductor Technology II
Fred H. Pollak; Raphael Tsu, Editor(s)

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