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Proceedings Paper

Photoreflectance Characterization Of GaAs/A1GaAs Thin Films, Heterojunctions And Multiple Quantum Well Structures
Author(s): O. J. Glembocki; B. V. Shanabrook; N. Bottka; W. T. Beard; J. Comas
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Paper Abstract

The optical modulation technique of photoreflectance (PR) has been applied to the characterization of GaAs/AlGaAs thin films, multiple quantum wells (MQW) and modulation-doped heterojunctions exhibiting a two dimensional electron gas (2DEG). It is shown that PR can yield much' of the same information as electroreflectance but because of its contactless nature PR is easier to implement and thus ideal for the characterization of microstructures.

Paper Details

Date Published: 28 June 1985
PDF: 9 pages
Proc. SPIE 0524, Spectroscopic Characterization Techniques for Semiconductor Technology II, (28 June 1985); doi: 10.1117/12.946323
Show Author Affiliations
O. J. Glembocki, Naval Research Laboratory (United States)
B. V. Shanabrook, Naval Research Laboratory (United States)
N. Bottka, Naval Research Laboratory (United States)
W. T. Beard, Naval Research Laboratory (United States)
J. Comas, Naval Research Laboratory (United States)


Published in SPIE Proceedings Vol. 0524:
Spectroscopic Characterization Techniques for Semiconductor Technology II
Fred H. Pollak; Raphael Tsu, Editor(s)

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