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Proceedings Paper

The Dynamics Of Reflection High Energy Electron Diffraction Intensity Behaviour As A Probe Of Crystal Growth: Computer Simulations And Measurements During Molecular Beam Epitaxial Growth Of GaAs/AlXGa1-XAs(100)
Author(s): A. Madhukar; S. V. Ghaisas; T. C. Lee; M. Y. Yen; P. Chen; J. Y. Kim; P. G. Newman
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Paper Abstract

The dynamics of the reflection high energy electron diffraction (RHEED) intensities during molecular beam epitaxial (MBE) growth potentially contains significant information regarding the dynamics of growth and the morphology of the growth front. Results of computer simulations based upon an atomistic model of the MBE growth kinetics are presented, along with measurements of the specular beam intensity behaviour during growth of GaAs/AlxGai-xAs(100) system. The measurements are shown to be a practical, real-time monitor for optimizing growth conditions for realization of high quality normal and inverted interfaces in heterojunctions, multiple quantum wells and superlattices. When combined with the computer simulations, they provide an understanding of the role of atomistic and collective surface kinetic processes of critical importance to MBE growth.

Paper Details

Date Published: 28 June 1985
PDF: 8 pages
Proc. SPIE 0524, Spectroscopic Characterization Techniques for Semiconductor Technology II, (28 June 1985); doi: 10.1117/12.946322
Show Author Affiliations
A. Madhukar, University of Southern California (United States)
S. V. Ghaisas, University of Southern California (United States)
T. C. Lee, University of Southern California (United States)
M. Y. Yen, University of Southern California (United States)
P. Chen, University of Southern California (United States)
J. Y. Kim, University of Southern California (United States)
P. G. Newman, University of Southern California (United States)


Published in SPIE Proceedings Vol. 0524:
Spectroscopic Characterization Techniques for Semiconductor Technology II
Fred H. Pollak; Raphael Tsu, Editor(s)

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