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Proceedings Paper

Deep Level Studies Of Undoped CdTe
Author(s): P. S. Nayar
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Paper Abstract

Deep level studies of undoped semi-insulating CdTe were made using Schottky barrier diodes prepared with aluminum as the barrier metal. Four deep levels located at 208, 246, 455 and 585 meV above the valence band were seen in deep level capacitance transient spectroscopy (DLTS) data. Deep level densities were found to be 6.5x1012, 2.4x10", 6.3x1012 and 1.2x1013cm-8, respectively. DLTS data were supplemented by thermally stimulated capacitance (TSCAP) and admittance spectroscopy. The possibility of a deep level due to interface states is discussed.

Paper Details

Date Published: 28 June 1985
PDF: 10 pages
Proc. SPIE 0524, Spectroscopic Characterization Techniques for Semiconductor Technology II, (28 June 1985); doi: 10.1117/12.946321
Show Author Affiliations
P. S. Nayar, Aerojet ElectroSystems Company (United States)


Published in SPIE Proceedings Vol. 0524:
Spectroscopic Characterization Techniques for Semiconductor Technology II
Fred H. Pollak; Raphael Tsu, Editor(s)

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