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Proceedings Paper

Infrared Absorption Spectroscopy For The Characterization Of Oxygen In Silicon
Author(s): W. C. O'Mara
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Paper Abstract

Oxygen is present in most silicon used for device fabrication and has important impact on fabrication yields and materials properties. This paper presents two aspects of the use of infrared absorption for the characterization of oxygen in silicon. The first part of the paper presents a summary of the efforts of various researchers to develop quantitative, non-destructive measurement of oxygen levels in silicon by means of the measurement of the 9 μm absorption band's absorption coefficient. The second part of the presentation presents evidence for the existence of two distinct species of oxygen in silicon based on spectroscopic evidence. This evidence suggests the existence of a substitutional species, with an absorption band at 19.5 μm, in addition to the familiar interstitial species with an absorption at 9 μm. Some of the consequences of this observation are discussed.

Paper Details

Date Published: 28 June 1985
PDF: 7 pages
Proc. SPIE 0524, Spectroscopic Characterization Techniques for Semiconductor Technology II, (28 June 1985); doi: 10.1117/12.946320
Show Author Affiliations
W. C. O'Mara, Rose Associates (United States)

Published in SPIE Proceedings Vol. 0524:
Spectroscopic Characterization Techniques for Semiconductor Technology II
Fred H. Pollak; Raphael Tsu, Editor(s)

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