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Proceedings Paper

Deep Level Derivative Spectroscopy Of Semiconductors By Wavelength Modulation Techniques
Author(s): R. Braunstein; S. M. Eetemadi; R. K. Kim
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Paper Abstract

An infrared wavelength modulated absorption spectrometer capable of measuring changes in the absorption coefficient of levels of 10-5 cm-1 in the spectral range 0.2-20 microns was employed to study bulk and surface absorption in semiconductors. The results of the study of deep levels in semi-insulating GaAs, surface layers on Si, GaAs, and HgCdTe, oxygen complexes in floating-zone silicon, and determination of strain in ion implanted layers are presented.

Paper Details

Date Published: 28 June 1985
PDF: 10 pages
Proc. SPIE 0524, Spectroscopic Characterization Techniques for Semiconductor Technology II, (28 June 1985); doi: 10.1117/12.946319
Show Author Affiliations
R. Braunstein, University of California (United States)
S. M. Eetemadi, University of California (United States)
R. K. Kim, University of California (United States)


Published in SPIE Proceedings Vol. 0524:
Spectroscopic Characterization Techniques for Semiconductor Technology II
Fred H. Pollak; Raphael Tsu, Editor(s)

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