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Proceedings Paper

Impurity Site Determination From High Resolution Localized Vibrational Mode Infrared Absorption Measurements
Author(s): William M. Theis
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Paper Abstract

High resolution infrared absorption measurements of the localized vibrational mode (LVM) of light substitutional impurities in compound semiconductors have provided direct spectroscopic evidence for the impurity site location in the lattice without the need for supplementary measurements. Additional structure arises whenever the impurity is surrounded by differing isotopes of the nearest neighbor (nn) host atoms as opposed to the single LVM line that occurs when the nn are composed of a single isotope. For the examples of carbon and silicon in GaAs, the advantages of sensitivity and nondestructive nature are explored as well as the problems in obtaining an accurate calibration to the actual impurity concentration. Various influences on the LVM measurement considered are the effect of sample temperature, instrument resolution, and mathematical manipulations to the data. Finally, other materials are considered in light of the possible potential for application of this new feature of the LVM technique.

Paper Details

Date Published: 28 June 1985
PDF: 6 pages
Proc. SPIE 0524, Spectroscopic Characterization Techniques for Semiconductor Technology II, (28 June 1985); doi: 10.1117/12.946318
Show Author Affiliations
William M. Theis, Wright State University (United States)


Published in SPIE Proceedings Vol. 0524:
Spectroscopic Characterization Techniques for Semiconductor Technology II
Fred H. Pollak; Raphael Tsu, Editor(s)

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