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Proceedings Paper

Deep - Level Transient Spectroscopy: From Characterization To Electronic Defect Identification
Author(s): N. M. Johnson
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Paper Abstract

This paper presents an overview of the application of deep level transient spectroscopy (DLTS) for the characterization and identification of electronic defects in semiconductors. The range of defect problems that has been studied by DLTS is illustrated with results from crystalline semiconductors, semiconductor - insulator interfaces, and amorphous semiconductors,

Paper Details

Date Published: 28 June 1985
PDF: 11 pages
Proc. SPIE 0524, Spectroscopic Characterization Techniques for Semiconductor Technology II, (28 June 1985); doi: 10.1117/12.946317
Show Author Affiliations
N. M. Johnson, Xerox Palo Alto Research Center (United States)


Published in SPIE Proceedings Vol. 0524:
Spectroscopic Characterization Techniques for Semiconductor Technology II
Fred H. Pollak; Raphael Tsu, Editor(s)

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