Proceedings Paper
Ion Beam Spectroscopy For III - V Semiconductor Characterization| Format | Member Price | Non-Member Price |
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Paper Abstract
A detailed discussion is presented concerning the use of the ion beam spectroscopic techniques of RBS, PIXE, and channeling. Emphasis is placed on extracting relevant atom site information of impurities and alloy elements in the III - V compound semiconductor series. This is accomplished through integration of the three types of spectroscopy mentioned with data being presented on specific site location of substitutional impurities through plannar contstrained assymetric angular scans across axial channeling directions.
Paper Details
Date Published: 28 June 1985
PDF: 9 pages
Proc. SPIE 0524, Spectroscopic Characterization Techniques for Semiconductor Technology II, (28 June 1985); doi: 10.1117/12.946316
Published in SPIE Proceedings Vol. 0524:
Spectroscopic Characterization Techniques for Semiconductor Technology II
Fred H. Pollak; Raphael Tsu, Editor(s)
PDF: 9 pages
Proc. SPIE 0524, Spectroscopic Characterization Techniques for Semiconductor Technology II, (28 June 1985); doi: 10.1117/12.946316
Show Author Affiliations
P. P. Pronko, Universal Energy Systems, Inc. (United States)
R. S. Bhattacharya, Universal Energy Systems, Inc. (United States)
Published in SPIE Proceedings Vol. 0524:
Spectroscopic Characterization Techniques for Semiconductor Technology II
Fred H. Pollak; Raphael Tsu, Editor(s)
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