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Proceedings Paper

Studies Of The Si/SiO2 Interface Using Synchrotron Radiation
Author(s): Michael H. Hecht; F. J. Grunthaner
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Paper Abstract

Synchrotron radiation photoemission spectroscopy (SRPS) in the 1-4 KeV photon energy range is a useful tool for interface characterization. We present results of a series of studies of the near-interface region of Si/Si02 which confirm that a bond strain gradient exists in the oxide as a result of lattice mismatch. These experiments include measurement of photoemission lineshape changes as a function of photon energy, corresponding changes in the electron escape depth near the interface, and surface extended x-ray absorption fine structure (SEXAFS) measurements directly indicating the shortening of the Si-Si second nearest neighbor distance in the near-interface region of the oxide.

Paper Details

Date Published: 28 June 1985
PDF: 7 pages
Proc. SPIE 0524, Spectroscopic Characterization Techniques for Semiconductor Technology II, (28 June 1985); doi: 10.1117/12.946315
Show Author Affiliations
Michael H. Hecht, California Institute of Technology (United States)
F. J. Grunthaner, California Institute of Technology (United States)


Published in SPIE Proceedings Vol. 0524:
Spectroscopic Characterization Techniques for Semiconductor Technology II
Fred H. Pollak; Raphael Tsu, Editor(s)

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