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Proceedings Paper

Growth of CdZnTe by the detached Bridgman method
Author(s): Shariar Motakef; Piotr Becla; Stacy Swider; Krzysztof Becla; John Fiala; Matthew R. Overholt
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Paper Abstract

We have developed the detached Bridgman process for growth of CdZnTe crystals. Detachment of the solidification interface from the growth ampoule results in a low density of dislocations in the grown material and large single crystal grains. The detached Bridgman process also provides for direct control of the melt composition close to the growth front, allowing for accurate control of both the density of the Te/Cd precipitates as well as the majority carrier concentration in the grown material. The influence of melt-composition control and compensation by shallow and deep donors on detector performance is presented.

Paper Details

Date Published: 24 October 2012
PDF: 9 pages
Proc. SPIE 8507, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV, 85070V (24 October 2012); doi: 10.1117/12.946212
Show Author Affiliations
Shariar Motakef, CapeSym, Inc. (United States)
Piotr Becla, CapeSym, Inc. (United States)
Stacy Swider, CapeSym, Inc. (United States)
Krzysztof Becla, CapeSym, Inc. (United States)
John Fiala, CapeSym, Inc. (United States)
Matthew R. Overholt, CapeSym, Inc. (United States)

Published in SPIE Proceedings Vol. 8507:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV
Ralph B. James; Arnold Burger; Larry A. Franks; Michael Fiederle, Editor(s)

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