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Proceedings Paper

Carrier escape from ground state and non-zero resonance frequency at low bias powers for semiconductor quantum-dot lasers
Author(s): C. Wang; F. Grillot; J. Even
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Paper Abstract

The three-dimensional confinement of electrons and holes in the semiconductor quantum dot (QD) structure profoundly changes its density of states compared to the bulk semiconductor or the thin-film quantum well (QW) structure. The aim of this paper is to theoretically investigate the microwave properties of InAs/InP(311B) QD lasers. A new expression of the modulation transfer function is derived for the analysis of QD laser modulation properties based on a set of four rate equations. Analytical calculations point out that carrier escape from ground state (GS) to excited state (ES) induces a non-zero resonance frequency at low bias powers. Calculations also show that the carrier escape leads to a larger damping factor offset as compared to conventional QW lasers. These results are of prime importance for a better understanding of the carrier dynamics in QD lasers as well as for further optimization of low cost sources for optical telecommunications.

Paper Details

Date Published: 11 May 2012
PDF: 8 pages
Proc. SPIE 8432, Semiconductor Lasers and Laser Dynamics V, 843225 (11 May 2012); doi: 10.1117/12.946053
Show Author Affiliations
C. Wang, Univ. Européenne de Bretagne, INSA, CNRS FOTON (France)
F. Grillot, Univ. Européenne de Bretagne, INSA, CNRS FOTON (France)
Telecom Paristech, Ecole Nationale Supérieure des Télécommunications, CNRS LTCI (France)
J. Even, Univ. Européenne de Bretagne, INSA, CNRS FOTON (France)


Published in SPIE Proceedings Vol. 8432:
Semiconductor Lasers and Laser Dynamics V
Krassimir Panajotov; Marc Sciamanna; Angel Valle; Rainer Michalzik, Editor(s)

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