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Proceedings Paper

Nanomorphology of ZnSe on patterned substrate
Author(s): N. B. Singh; G. Kanner; K. Green; M. Marable; A. Berghmans; B. Wagner; D. Kahler; D. J. Knuteson; M. King; S. McLaughlin
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Paper Abstract

We have grown high quality oriented nano particles of zinc selenide (ZnSe) on patterned gallium arsenide (GaAs) substrates. We have developed and used silver and gold based templates with domains of 35 μm. We observed that the films grew epitaxially on the non-patterned portion of GaAs wafers with 4° miscut from (001). Several samples of thickness ranging from 5 μm to 1 mm thickness of ZnSe were grown in a vertical closed tube using the temperature gradient as the driving force. The quality of the samples was analyzed by X-ray and morphology was studied by SEM, FIB, and AFM and by etching the films. The rocking curve showed that the FWHM values for different films were in the range of 300-350 arcs second. We observed that film on (001) portion of the template grew with smooth morphology but morphology was slightly different on the templates. The grown film had strong (111) peak also on the patterned substrate in addition to the (001) peak observed for the film on unpatterned substrate.

Paper Details

Date Published: 15 October 2012
PDF: 7 pages
Proc. SPIE 8497, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications VI, 849702 (15 October 2012); doi: 10.1117/12.945987
Show Author Affiliations
N. B. Singh, Univ. of Maryland, Baltimore County (United States)
G. Kanner, Northrop Grumman Electronic Systems (United States)
K. Green, Northrop Grumman Electronic Systems (United States)
M. Marable, Northrop Grumman Electronic Systems (United States)
A. Berghmans, Northrop Grumman Corp. (United States)
B. Wagner, Northrop Grumman Corp. (United States)
D. Kahler, Northrop Grumman Corp. (United States)
D. J. Knuteson, Northrop Grumman Corp. (United States)
M. King, Northrop Grumman Corp. (United States)
S. McLaughlin, Northrop Grumman Corp. (United States)


Published in SPIE Proceedings Vol. 8497:
Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications VI
Shizhuo Yin; Ruyan Guo, Editor(s)

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