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Proceedings Paper

3D silicon micro-pillars/-walls decorated with aluminum-ZnO/ZnO nanowires for opto-electronic device applications
Author(s): Hakan Karaagac; Logeeswaran V. J.; M. Saif Islam
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Paper Abstract

In this paper, high aspect ratio vertically oriented p-silicon (100) micropillars and microwalls were fabricated using the deep reactive ion etching (DRIE) process with the BOSCH recipe of cyclical passivation and etching. Two different patterns were etched; uniform pillar arrays of dimensions ~15µm (height) x 2µm (diameter) and wall arrays of dimensions ~1.5µm (width) x 25µm (height). Three-dimensional (3D) heterostructures of n-ZnO/p-Si heterostructures were fabricated from growing hydrothermally dense arrays of ZnO nanowires (290-400 nm in length and 48-80 nm in diameter) and depositing Aluminum-ZnO (AZO) thin film onto the high aspect ratio vertically oriented p-silicon micropillars and microwalls. The performances of the fabricated heterostructure optoelectronic devices were characterized for different applications including solar cells, photodetectors and field ionization gas sensors.

Paper Details

Date Published: 19 October 2012
PDF: 8 pages
Proc. SPIE 8467, Nanoepitaxy: Materials and Devices IV, 84670Y (19 October 2012); doi: 10.1117/12.945974
Show Author Affiliations
Hakan Karaagac, Univ. of California, Davis (United States)
Logeeswaran V. J., Univ. of California, Davis (United States)
M. Saif Islam, Univ. of California, Davis (United States)


Published in SPIE Proceedings Vol. 8467:
Nanoepitaxy: Materials and Devices IV
Nobuhiko P. Kobayashi; A. Alec Talin; M. Saif Islam, Editor(s)

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